rohm was established in kyoto, japan, in 1958. rohm designs and manufactures semiconductors, integrated circuits and other electronic components. these components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets.
| Part Number | RDN150N20FU6 |
|---|---|
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1224pF @ 10V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 7.5A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FN |
| Package / Case | TO-220-3 Full Pack |
Manufacturer: Rohm Semiconductor
Description: MOSFET N-CH 200V 10A TO-220FN
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