rohm was established in kyoto, japan, in 1958. rohm designs and manufactures semiconductors, integrated circuits and other electronic components. these components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets.
| Part Number | RW1A013ZPT2R |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 6V |
| Vgs (Max) | ±10V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Rds On (Max) @ Id, Vgs | 260 mOhm @ 1.3A, 4.5V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-WEMT |
| Package / Case | SOT-563, SOT-666 |
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