rohm was established in kyoto, japan, in 1958. rohm designs and manufactures semiconductors, integrated circuits and other electronic components. these components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets.
| Part Number | SCT2H12NZGC11 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 18V |
| Vgs(th) (Max) @ Id | 4V @ 900µA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 184pF @ 800V |
| Vgs (Max) | +22V, -6V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.1A, 18V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PFM |
| Package / Case | TO-3PFM, SC-93-3 |
Manufacturer: Rohm Semiconductor
Description: 1700V 1.2 OHM 4A SIC FET
In Stock: 0
Manufacturer: Rohm Semiconductor
Description: MOSFET N-CH 1700V 3.7A
In Stock: 763
