Home Product Index Discrete Semiconductor Transistors - FETs, MOSFETs - Single 2SK1119(F)

Toshiba Semiconductor and Storage 2SK1119(F)

Part Number
2SK1119(F)
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 1000V 4A TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Family
Transistors - FETs, MOSFETs - Single
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

In Stock 3503 pcs
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Product Parameter
Part Number 2SK1119(F)
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Rds On (Max) @ Id, Vgs 3.8 Ohm @ 2A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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