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Artikelnummer | TPC8212-H(TE12LQ,M |
---|---|
Teilstatus | Obsolete |
FET Typ | 2 N-Channel (Dual) |
FET-Eigenschaft | Logic Level Gate |
Drain auf Source-Spannung (Vdss) | 30V |
Strom - Dauerablass (Id) @ 25 ° C | 6A |
Rds Ein (Max) @ Id, Vgs | 21 mOhm @ 3A, 10V |
Vgs (th) (Max) @ Id | 2.3V @ 1mA |
Gate Ladung (Qg) (Max) @ Vgs | 16nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | 840pF @ 10V |
Leistung max | 450mW |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / Fall | 8-SOIC (0.173", 4.40mm Width) |
Lieferantengerätepaket | 8-SOP (5.5x6.0) |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET 2N-CH 30V 5.5A SOP8
Auf Lager: 0
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET 2N-CH 30V 6A SOP8
Auf Lager: 0
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET 2N-CH 60V 5A SOP8
Auf Lager: 0