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| Part Number | 3LN01C-TB-E |
|---|---|
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 150mA (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V, 4V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 1.58nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 10V |
| Vgs (Max) | ±10V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta) |
| Rds On (Max) @ Id, Vgs | 3.7 Ohm @ 80mA, 4V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-CP |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Manufacturer: ON Semiconductor
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