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| Part Number | IDC04S60CEX1SA1 |
|---|---|
| Part Status | Obsolete |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 4A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.9V @ 4A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 50µA @ 600V |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -55°C ~ 175°C |
Manufacturer: Infineon Technologies
Description: DIODE SIC 600V 4A SAWN WAFER
In Stock: 0
Manufacturer: Infineon Technologies
Description: DIODE GEN PURPOSE SAWN WAFER
In Stock: 0
