renesas electronics america designs and manufactures highly integrated semiconductor system solutions for automotive, mobile and pc/av markets.
| Part Number | N0602N-S19-AY |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 133nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 7730pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 156W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 50A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 Isolated Tab |
Manufacturer: Renesas Electronics America
Description: MOSFET N-CH 60V 100A TO-220
In Stock: 0
