Home Product Index Discrete Semiconductor Transistors - Bipolar (BJT) - Arrays, Pre-Biased RN1706JE(TE85L,F)

Toshiba Semiconductor and Storage RN1706JE(TE85L,F)

Part Number
RN1706JE(TE85L,F)
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS 2NPN PREBIAS 0.1W ESV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Family
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

In Stock 37 pcs
  • Reference Price

    (In US Dollars)
  • 1 pcs

    0.28500/pcs
Total:0.28500/pcs Unit Price:
0.28500/pcs
Target price:
Quantity:
Product Parameter
Part Number RN1706JE(TE85L,F)
Part Status Discontinued at Digi-Key
Transistor Type 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-553
Supplier Device Package ESV
Related Products
RN1706JE(TE85L,F)

Manufacturer: Toshiba Semiconductor and Storage

Description: TRANS 2NPN PREBIAS 0.1W ESV

In Stock: 15

RFQ 0.28500/pcs