Home Product Index Discrete Semiconductor Transistors - Bipolar (BJT) - Arrays, Pre-Biased RN2709JE(TE85L,F)

Toshiba Semiconductor and Storage RN2709JE(TE85L,F)

Part Number
RN2709JE(TE85L,F)
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS 2PNP PREBIAS 0.1W ESV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Family
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

In Stock 10000 pcs
  • Reference Price

    (In US Dollars)
  • 1 pcs

    0.04410/pcs
  • 4,000 pcs

    0.04410/pcs
Total:0.04410/pcs Unit Price:
0.04410/pcs
Target price:
Quantity:
Product Parameter
Part Number RN2709JE(TE85L,F)
Part Status Active
Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 22k
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-553
Supplier Device Package ESV
Related Products
RN2709JE(TE85L,F)

Manufacturer: Toshiba Semiconductor and Storage

Description: TRANS 2PNP PREBIAS 0.1W ESV

In Stock: 4000

RFQ 0.04410/pcs