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| Artikelnummer | FQI8N60CTU |
|---|---|
| Teilstatus | Active |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 600V |
| Strom - Dauerablass (Id) @ 25 ° C | 7.5A (Tc) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA |
| Gate Ladung (Qg) (Max) @ Vgs | 36nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 1255pF @ 25V |
| Vgs (Max) | ±30V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 3.13W (Ta), 147W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 1.2 Ohm @ 3.75A, 10V |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Through Hole |
| Lieferantengerätepaket | I2PAK (TO-262) |
| Paket / Fall | TO-262-3 Long Leads, I²Pak, TO-262AA |
Hersteller: Fairchild/ON Semiconductor
Beschreibung: MOSFET N-CH 600V 7.5A I2PAK
Auf Lager: 984
