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| Artikelnummer | NSTB60BDW1T1G |
|---|---|
| Teilstatus | Active |
| Transistor-Typ | 1 NPN Pre-Biased, 1 PNP |
| Aktuell - Sammler (Ic) (Max) | 150mA |
| Spannung - Kollektor-Emitter-Durchbruch (max.) | 50V |
| Widerstand - Basis (R1) (Ohm) | 22k |
| Widerstand - Emitter Basis (R2) (Ohm) | 47k |
| Gleichstromverstärkung (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 120 @ 5mA, 10V |
| Vce Sättigung (Max) @ Ib, Ic | 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA |
| Aktuell - Kollektor Cutoff (Max) | 500nA |
| Frequenz - Übergang | 140MHz |
| Leistung max | 250mW |
| Befestigungsart | Surface Mount |
| Paket / Fall | 6-TSSOP, SC-88, SOT-363 |
| Lieferantengerätepaket | SC-88/SC70-6/SOT-363 |
Hersteller: ON Semiconductor
Beschreibung: TRANS NPN PREBIAS/PNP SOT363
Auf Lager: 0
Hersteller: ON Semiconductor
Beschreibung: TRANS NPN PREBIAS/PNP 0.25W SC88
Auf Lager: 495000
