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| Artikelnummer | RN2610(TE85L,F) |
|---|---|
| Teilstatus | Active |
| Transistor-Typ | 2 PNP - Pre-Biased (Dual) |
| Aktuell - Sammler (Ic) (Max) | 100mA |
| Spannung - Kollektor-Emitter-Durchbruch (max.) | 50V |
| Widerstand - Basis (R1) (Ohm) | 4.7k |
| Widerstand - Emitter Basis (R2) (Ohm) | - |
| Gleichstromverstärkung (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Vce Sättigung (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Aktuell - Kollektor Cutoff (Max) | 100nA (ICBO) |
| Frequenz - Übergang | 200MHz |
| Leistung max | 300mW |
| Befestigungsart | Surface Mount |
| Paket / Fall | SC-74, SOT-457 |
| Lieferantengerätepaket | SM6 |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: TRANS 2PNP PREBIAS 0.3W SM6
Auf Lager: 0
