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| Numero di parte | RN2610(TE85L,F) |
|---|---|
| Stato parte | Active |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Corrente - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistore - Base (R1) (Ohm) | 4.7k |
| Resistor - Emitter Base (R2) (Ohm) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Corrente - Limite del collettore (max) | 100nA (ICBO) |
| Frequenza - Transizione | 200MHz |
| Potenza - Max | 300mW |
| Tipo di montaggio | Surface Mount |
| Pacchetto / caso | SC-74, SOT-457 |
| Pacchetto dispositivo fornitore | SM6 |
fabbricante: Toshiba Semiconductor and Storage
Descrizione: TRANS 2PNP PREBIAS 0.3W SM6
Disponibile: 0
