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| Artikelnummer | SSM6P15FE(TE85L,F) |
|---|---|
| Teilstatus | Active |
| FET Typ | 2 P-Channel (Dual) |
| FET-Eigenschaft | Logic Level Gate |
| Drain auf Source-Spannung (Vdss) | 30V |
| Strom - Dauerablass (Id) @ 25 ° C | 100mA |
| Rds Ein (Max) @ Id, Vgs | 12 Ohm @ 10mA, 4V |
| Vgs (th) (Max) @ Id | 1.7V @ 100µA |
| Gate Ladung (Qg) (Max) @ Vgs | - |
| Eingangskapazität (Ciss) (Max) @ Vds | 9.1pF @ 3V |
| Leistung max | 150mW |
| Betriebstemperatur | 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Paket / Fall | SOT-563, SOT-666 |
| Lieferantengerätepaket | ES6 (1.6x1.6) |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET 2P-CH 30V 0.1A ES6
Auf Lager: 0
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET P-CH 20V 0.1A ES6
Auf Lager: 3947
