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Numero de parte | SSM6P15FE(TE85L,F) |
---|---|
Estado de la pieza | Active |
Tipo de FET | 2 P-Channel (Dual) |
Característica FET | Logic Level Gate |
Drene a la fuente de voltaje (Vdss) | 30V |
Corriente - Drenaje continuo (Id) a 25 ° C | 100mA |
Rds On (Max) @ Id, Vgs | 12 Ohm @ 10mA, 4V |
Vgs (th) (Max) @ Id | 1.7V @ 100µA |
Carga de puerta (Qg) (Max) @ Vgs | - |
Capacitancia de entrada (Ciss) (Max) @ Vds | 9.1pF @ 3V |
Potencia - Max | 150mW |
Temperatura de funcionamiento | 150°C (TJ) |
Tipo de montaje | Surface Mount |
Paquete / caja | SOT-563, SOT-666 |
Paquete de dispositivo del proveedor | ES6 (1.6x1.6) |
Fabricante: Toshiba Semiconductor and Storage
Descripción: MOSFET 2P-CH 30V 0.1A ES6
En stock: 0
Fabricante: Toshiba Semiconductor and Storage
Descripción: MOSFET P-CH 20V 0.1A ES6
En stock: 3947