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| Artikelnummer | TPC8208(TE12L,Q) |
|---|---|
| Teilstatus | Discontinued at Digi-Key |
| FET Typ | 2 N-Channel (Dual) |
| FET-Eigenschaft | Logic Level Gate |
| Drain auf Source-Spannung (Vdss) | 20V |
| Strom - Dauerablass (Id) @ 25 ° C | 5A |
| Rds Ein (Max) @ Id, Vgs | 50 mOhm @ 2.5A, 4V |
| Vgs (th) (Max) @ Id | 1.2V @ 200µA |
| Gate Ladung (Qg) (Max) @ Vgs | 9.5nC @ 5V |
| Eingangskapazität (Ciss) (Max) @ Vds | 780pF @ 10V |
| Leistung max | 450mW |
| Betriebstemperatur | 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Paket / Fall | 8-SOIC (0.173", 4.40mm Width) |
| Lieferantengerätepaket | 8-SOP (5.5x6.0) |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET 2N-CH 20V 6A 8-SOP
Auf Lager: 0
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET 2N-CH 20V 6A 8-SOP
Auf Lager: 0
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET 2N-CH 20V 5A 8-SOP
Auf Lager: 0
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET 2N-CH 20V 5A SOP8
Auf Lager: 0
