Toshiba Semiconductor and Storage TPC8212-H(TE12LQ,M

Artikelnummer: TPC8212-H(TE12LQ,M
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET 2N-CH 30V 6A SOP8
Bleifreier Status / RoHS-Status: Lead free / RoHS Compliant
Familie: Transistoren - FETs, MOSFETs - Arrays

Toshiba Semiconductor and Storage

toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

Produktparameter

Artikelnummer	TPC8212-H(TE12LQ,M
Teilstatus	Obsolete
FET Typ	2 N-Channel (Dual)
FET-Eigenschaft	Logic Level Gate
Drain auf Source-Spannung (Vdss)	30V
Strom - Dauerablass (Id) @ 25 ° C	6A
Rds Ein (Max) @ Id, Vgs	21 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id	2.3V @ 1mA
Gate Ladung (Qg) (Max) @ Vgs	16nC @ 10V
Eingangskapazität (Ciss) (Max) @ Vds	840pF @ 10V
Leistung max	450mW
Betriebstemperatur	150°C (TJ)
Befestigungsart	Surface Mount
Paket / Fall	8-SOIC (0.173", 4.40mm Width)
Lieferantengerätepaket	8-SOP (5.5x6.0)