toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
| Numero de parte | TPC8212-H(TE12LQ,M |
|---|---|
| Estado de la pieza | Obsolete |
| Tipo de FET | 2 N-Channel (Dual) |
| Característica FET | Logic Level Gate |
| Drene a la fuente de voltaje (Vdss) | 30V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 6A |
| Rds On (Max) @ Id, Vgs | 21 mOhm @ 3A, 10V |
| Vgs (th) (Max) @ Id | 2.3V @ 1mA |
| Carga de puerta (Qg) (Max) @ Vgs | 16nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 840pF @ 10V |
| Potencia - Max | 450mW |
| Temperatura de funcionamiento | 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 8-SOIC (0.173", 4.40mm Width) |
| Paquete de dispositivo del proveedor | 8-SOP (5.5x6.0) |
Fabricante: Toshiba Semiconductor and Storage
Descripción: MOSFET 2N-CH 30V 5.5A SOP8
En stock: 0
Fabricante: Toshiba Semiconductor and Storage
Descripción: MOSFET 2N-CH 30V 6A SOP8
En stock: 0
Fabricante: Toshiba Semiconductor and Storage
Descripción: MOSFET 2N-CH 60V 5A SOP8
En stock: 0
