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| Part Number | IPG20N06S2L35AATMA1 |
|---|---|
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 27µA |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 25V |
| Power - Max | 65W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-10 |
Manufacturer: Infineon Technologies
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Manufacturer: Infineon Technologies
Description: MOSFET 2N-CH 8TDSON
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Manufacturer: Infineon Technologies
Description: MOSFET 2N-CH 8TDSON
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Manufacturer: Infineon Technologies
Description: MOSFET 2N-CH 8TDSON
In Stock: 0
Manufacturer: Infineon Technologies
Description: MOSFET 2N-CH 8TDSON
In Stock: 0
Manufacturer: Infineon Technologies
Description: MOSFET 2N-CH 8TDSON
In Stock: 5000
Manufacturer: Infineon Technologies
Description: MOSFET 2N-CH 8TDSON
In Stock: 0
