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| Numero de parte | FDMQ8203 |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | 2 N and 2 P-Channel (H-Bridge) |
| Característica FET | Logic Level Gate |
| Drene a la fuente de voltaje (Vdss) | 100V, 80V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 3.4A, 2.6A |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 3A, 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA |
| Carga de puerta (Qg) (Max) @ Vgs | 5nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 210pF @ 50V |
| Potencia - Max | 2.5W |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 12-WDFN Exposed Pad |
| Paquete de dispositivo del proveedor | 12-MLP (5x4.5) |
