toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
| Numero de parte | RN2709JE(TE85L,F) |
|---|---|
| Estado de la pieza | Active |
| Tipo de transistor | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltaje: ruptura del emisor del colector (máximo) | 50V |
| Resistencia - Base (R1) (Ohmios) | 47k |
| Resistencia - Base del emisor (R2) (ohmios) | 22k |
| Ganancia de corriente CC (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Saturación de Vce (Máx) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Corriente - corte de colector (máximo) | 100nA (ICBO) |
| Frecuencia - Transición | 200MHz |
| Potencia - Max | 100mW |
| Tipo de montaje | Surface Mount |
| Paquete / caja | SOT-553 |
| Paquete de dispositivo del proveedor | ESV |
Fabricante: Toshiba Semiconductor and Storage
Descripción: TRANS 2PNP PREBIAS 0.1W ESV
En stock: 4000
