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| Número da peça | RN2709JE(TE85L,F) |
|---|---|
| Status da Parte | Active |
| Tipo de transistor | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltagem - Coletor Emissor Disrupção (Máx.) | 50V |
| Resistor - Base (R1) (Ohms) | 47k |
| Resistor - Emitter Base (R2) (Ohms) | 22k |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequência - Transição | 200MHz |
| Power - Max | 100mW |
| Tipo de montagem | Surface Mount |
| Pacote / Caso | SOT-553 |
| Pacote de dispositivos de fornecedores | ESV |
Fabricante: Toshiba Semiconductor and Storage
Descrição: TRANS 2PNP PREBIAS 0.1W ESV
Em estoque: 4000
