nexperia is a dedicated global leader in small signal discretes, logic and powermos devices. originally part of philips and more recently nxp, this new company became independent at the beginning of 2017.
| Numéro d'article | PHT6NQ10T,135 |
|---|---|
| État de la pièce | Active |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 100V |
| Courant - Drain continu (Id) @ 25 ° C | 3A (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 10V |
| Vgs (th) (Max) @ Id | 4V @ 1mA |
| Charge de porte (Qg) (Max) @ Vgs | 21nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 633pF @ 25V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 1.8W (Ta), 8.3W (Tc) |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 3A, 10V |
| Température de fonctionnement | -65°C ~ 150°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | SOT-223 |
| Paquet / cas | TO-261-4, TO-261AA |
Fabricant: Nexperia USA Inc.
La description: MOSFET N-CH 100V 3A SOT223
En stock: 8000
