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Numéro d'article | TH58BVG2S3HTAI0 |
---|---|
État de la pièce | Active |
Type de mémoire | Non-Volatile |
Format de la mémoire | EEPROM |
La technologie | EEPROM - NAND |
Taille mémoire | 4Gb (512M x 8) |
Fréquence d'horloge | - |
Écrire un temps de cycle - Word, Page | 25ns |
Temps d'accès | 25ns |
Interface de mémoire | Parallel |
Tension - Alimentation | 2.7 V ~ 3.6 V |
Température de fonctionnement | -40°C ~ 85°C (TA) |
Type de montage | Surface Mount |
Paquet / cas | 48-TFSOP (0.724", 18.40mm Width) |
Package de périphérique fournisseur | 48-TSOP I |
Fabricant: Toshiba Semiconductor and Storage
La description: IC EEPROM 4GBIT 25NS 48TSOP
En stock: 182
Fabricant: Toshiba Semiconductor and Storage
La description: IC EEPROM 4GBIT 25NS 48TSOP
En stock: 96
Fabricant: Toshiba Semiconductor and Storage
La description: IC EEPROM 4GBIT 25NS 48TSOP
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: IC EEPROM 4GBIT 25NS 67FBGA
En stock: 96