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| Part Number | GB10SLT12-252 |
|---|---|
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 2V @ 10A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 250µA @ 1200V |
| Capacitance @ Vr, F | 520pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 |
| Operating Temperature - Junction | -55°C ~ 175°C |
Manufacturer: GeneSiC Semiconductor
Description: SIC SCHOTTKY DIODE 1200V 10A
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Description: DIODE SCHOTTKY 1200V 10A TO220AC
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Manufacturer: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 1.2KV 10A TO252
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