Home Product Index Discrete Semiconductor Transistors - FETs, MOSFETs - Single PHB11N06LT,118

NXP USA Inc. PHB11N06LT,118

Part Number
PHB11N06LT,118
Manufacturer
NXP USA Inc.
Description
MOSFET N-CH 55V 10.3A D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Family
Transistors - FETs, MOSFETs - Single
NXP Semiconductors

NXP Semiconductors

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In Stock 4458 pcs
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Product Parameter
Part Number PHB11N06LT,118
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 10.3A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 5V, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Vgs (Max) ±15V
FET Feature -
Power Dissipation (Max) 33W (Tc)
Rds On (Max) @ Id, Vgs 130 mOhm @ 5.5A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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