rohm was established in kyoto, japan, in 1958. rohm designs and manufactures semiconductors, integrated circuits and other electronic components. these components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets.
| Part Number | SCT3120ALGC11 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 3.33mA |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 500V |
| Vgs (Max) | +22V, -4V |
| FET Feature | - |
| Power Dissipation (Max) | 103W (Tc) |
| Rds On (Max) @ Id, Vgs | 156 mOhm @ 6.7A, 18V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247N |
| Package / Case | TO-247-3 |
Manufacturer: Rohm Semiconductor
Description: MOSFET NCH 650V 21A TO247N
In Stock: 622
Manufacturer: Rohm Semiconductor
Description: MOSFET NCH 1.2KV 17A TO247N
In Stock: 0
