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| Numéro d'article | 2N7635-GA |
|---|---|
| État de la pièce | Active |
| FET Type | - |
| La technologie | SiC (Silicon Carbide Junction Transistor) |
| Drain à la tension de source (Vdss) | 650V |
| Courant - Drain continu (Id) @ 25 ° C | 4A (Tc) (165°C) |
| Tension du variateur (Max Rds On, Min Rds On) | - |
| Vgs (th) (Max) @ Id | - |
| Charge de porte (Qg) (Max) @ Vgs | - |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 324pF @ 35V |
| Vgs (Max) | - |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 47W (Tc) |
| Rds On (Max) @ Id, Vgs | 415 mOhm @ 4A |
| Température de fonctionnement | -55°C ~ 225°C (TJ) |
| Type de montage | Through Hole |
| Package de périphérique fournisseur | TO-257 |
| Paquet / cas | TO-257-3 |
Fabricant: ON Semiconductor
La description: MOSFET N-CH 60V 200MA TO-92
En stock: 0
Fabricant: ON Semiconductor
La description: MOSFET N-CH 60V 200MA TO-92
En stock: 0
Fabricant: ON Semiconductor
La description: MOSFET N-CH 60V 200MA TO-92
En stock: 0
