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| Part Number | RFD12N06RLESM9A |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 485pF @ 25V |
| Vgs (Max) | ±16V |
| FET Feature | - |
| Power Dissipation (Max) | 49W (Tc) |
| Rds On (Max) @ Id, Vgs | 63 mOhm @ 18A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer: Fairchild/ON Semiconductor
Description: MOSFET N-CH 60V 18A IPAK
In Stock: 0
Manufacturer: Fairchild/ON Semiconductor
Description: MOSFET N-CH 60V 18A DPAK
In Stock: 10000
