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| Part Number | 2N7635-GA |
|---|---|
| Part Status | Active |
| FET Type | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) (165°C) |
| Drive Voltage (Max Rds On,Min Rds On) | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 324pF @ 35V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Rds On (Max) @ Id, Vgs | 415 mOhm @ 4A |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-257 |
| Package / Case | TO-257-3 |
Manufacturer: ON Semiconductor
Description: MOSFET N-CH 60V 200MA TO-92
In Stock: 0
Manufacturer: ON Semiconductor
Description: MOSFET N-CH 60V 200MA TO-92
In Stock: 0
Manufacturer: ON Semiconductor
Description: MOSFET N-CH 60V 200MA TO-92
In Stock: 0
