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| Part Number | TPC8212-H(TE12LQ,M |
|---|---|
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Rds On (Max) @ Id, Vgs | 21 mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 10V |
| Power - Max | 450mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Supplier Device Package | 8-SOP (5.5x6.0) |
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 5.5A SOP8
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