diodes incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets.
| Artikelnummer | DMHC10H170SFJ-13 |
|---|---|
| Teilstatus | Active |
| FET Typ | 2 N and 2 P-Channel (H-Bridge) |
| FET-Eigenschaft | Standard |
| Drain auf Source-Spannung (Vdss) | 100V |
| Strom - Dauerablass (Id) @ 25 ° C | 2.9A, 2.3A |
| Rds Ein (Max) @ Id, Vgs | 160 mOhm @ 5A, 10V |
| Vgs (th) (Max) @ Id | 3V @ 250µA |
| Gate Ladung (Qg) (Max) @ Vgs | 9.7nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 1167pF @ 25V |
| Leistung max | 2.1W |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Paket / Fall | 12-VDFN Exposed Pad |
| Lieferantengerätepaket | V-DFN5045-12 |
Hersteller: Diodes Incorporated
Beschreibung: MOSFET 2N/2P-CH 100V DFN5045-12
Auf Lager: 0
