diodes incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets.
| Numéro d'article | DMHC10H170SFJ-13 |
|---|---|
| État de la pièce | Active |
| FET Type | 2 N and 2 P-Channel (H-Bridge) |
| FET Caractéristique | Standard |
| Drain à la tension de source (Vdss) | 100V |
| Courant - Drain continu (Id) @ 25 ° C | 2.9A, 2.3A |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 5A, 10V |
| Vgs (th) (Max) @ Id | 3V @ 250µA |
| Charge de porte (Qg) (Max) @ Vgs | 9.7nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 1167pF @ 25V |
| Puissance - Max | 2.1W |
| Température de fonctionnement | -55°C ~ 150°C (TJ) |
| Type de montage | Surface Mount |
| Paquet / cas | 12-VDFN Exposed Pad |
| Package de périphérique fournisseur | V-DFN5045-12 |
Fabricant: Diodes Incorporated
La description: MOSFET 2N/2P-CH 100V DFN5045-12
En stock: 0
