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| Artikelnummer | TK58A06N1,S4X |
|---|---|
| Teilstatus | Active |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 60V |
| Strom - Dauerablass (Id) @ 25 ° C | 58A (Tc) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 10V |
| Vgs (th) (Max) @ Id | 4V @ 500µA |
| Gate Ladung (Qg) (Max) @ Vgs | 46nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 3400pF @ 30V |
| Vgs (Max) | ±20V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 35W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 5.4 mOhm @ 29A, 10V |
| Betriebstemperatur | 150°C (TJ) |
| Befestigungsart | Through Hole |
| Lieferantengerätepaket | TO-220SIS |
| Paket / Fall | TO-220-3 Full Pack, Isolated Tab |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET N-CH 60V 58A TO-220
Auf Lager: 77
