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| Part Number | TK58A06N1,S4X |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4 mOhm @ 29A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220SIS |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
Manufacturer: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 58A TO-220
In Stock: 77
