toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
| Numero de parte | TK58A06N1,S4X |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | N-Channel |
| Tecnología | MOSFET (Metal Oxide) |
| Drene a la fuente de voltaje (Vdss) | 60V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 58A (Tc) |
| Voltaje de conducción (Rds máx. Encendidos, Rds mínimos activados) | 10V |
| Vgs (th) (Max) @ Id | 4V @ 500µA |
| Carga de puerta (Qg) (Max) @ Vgs | 46nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 3400pF @ 30V |
| Vgs (Max) | ±20V |
| Característica FET | - |
| Disipación de potencia (Máx) | 35W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4 mOhm @ 29A, 10V |
| Temperatura de funcionamiento | 150°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete de dispositivo del proveedor | TO-220SIS |
| Paquete / caja | TO-220-3 Full Pack, Isolated Tab |
Fabricante: Toshiba Semiconductor and Storage
Descripción: MOSFET N-CH 60V 58A TO-220
En stock: 77
