diodes incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets.
| Numéro d'article | DMG8N65SCT |
|---|---|
| État de la pièce | Active |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 650V |
| Courant - Drain continu (Id) @ 25 ° C | 8A (Tc) |
| Tension du variateur (Max Rds On, Min Rds On) | 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA |
| Charge de porte (Qg) (Max) @ Vgs | 30nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 1217pF @ 25V |
| Vgs (Max) | ±30V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3 Ohm @ 4A, 10V |
| Température de fonctionnement | -55°C ~ 150°C (TJ) |
| Type de montage | Through Hole |
| Package de périphérique fournisseur | TO-220AB |
| Paquet / cas | TO-220-3 |
Fabricant: Diodes Incorporated
La description: MOSFET 2N-CH 20V 6.1A DFN
En stock: 3000
Fabricant: Diodes Incorporated
La description: MOSFET 2N-CH 20V 4.9A 8TSSOP
En stock: 2500
Fabricant: Diodes Incorporated
La description: MOSFET N-CH 30V 11A TO252-3L
En stock: 2500
Fabricant: Diodes Incorporated
La description: MOSFET N-CH 30V 11.6A 8SOIC
En stock: 0
Fabricant: Diodes Incorporated
La description: MOSFET BVDSS: 501V 650V TO220-3
En stock: 0
