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| Numéro d'article | 2SJ058200L |
|---|---|
| État de la pièce | Obsolete |
| FET Type | P-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 200V |
| Courant - Drain continu (Id) @ 25 ° C | 2A (Tc) |
| Tension du variateur (Max Rds On, Min Rds On) | 10V |
| Vgs (th) (Max) @ Id | 4V @ 1mA |
| Charge de porte (Qg) (Max) @ Vgs | - |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 400pF @ 20V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 1W (Ta), 10W (Tc) |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 1A, 10V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | U-G2 |
| Paquet / cas | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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