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| Numéro d'article | SSM3J15FV,L3F |
|---|---|
| État de la pièce | Active |
| FET Type | P-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 30V |
| Courant - Drain continu (Id) @ 25 ° C | 100mA (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 2.5V, 4V |
| Vgs (th) (Max) @ Id | 1.7V @ 100µA |
| Charge de porte (Qg) (Max) @ Vgs | - |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 9.1pF @ 3V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 150mW (Ta) |
| Rds On (Max) @ Id, Vgs | 12 Ohm @ 10mA, 4V |
| Température de fonctionnement | -55°C ~ 150°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | VESM |
| Paquet / cas | SOT-723 |
Fabricant: Toshiba Semiconductor and Storage
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