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Toshiba Semiconductor and Storage SSM6N16FUTE85LF

Numéro d'article
SSM6N16FUTE85LF
Fabricant
Toshiba Semiconductor and Storage
La description
MOSFET 2N-CH 20V 0.1A US6
Statut sans plomb / statut RoHS
Lead free / RoHS Compliant
Famille
Transistors - FET, MOSFET - Matrices
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

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Paramètre du produit
Numéro d'article SSM6N16FUTE85LF
État de la pièce Active
FET Type 2 N-Channel (Dual)
FET Caractéristique Standard
Drain à la tension de source (Vdss) 20V
Courant - Drain continu (Id) @ 25 ° C 100mA
Rds On (Max) @ Id, Vgs 3 Ohm @ 10mA, 4V
Vgs (th) (Max) @ Id 1.1V @ 100µA
Charge de porte (Qg) (Max) @ Vgs -
Capacitance d'entrée (Ciss) (Max) @ Vds 9.3pF @ 3V
Puissance - Max 200mW
Température de fonctionnement 150°C (TJ)
Type de montage Surface Mount
Paquet / cas 6-TSSOP, SC-88, SOT-363
Package de périphérique fournisseur US6
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