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| Part Number | RN2610(TE85L,F) |
|---|---|
| Part Status | Active |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 4.7k |
| Resistor - Emitter Base (R2) (Ohms) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 200MHz |
| Power - Max | 300mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Supplier Device Package | SM6 |
Manufacturer: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SM6
In Stock: 0
