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| Part Number | GA10SICP12-263 |
|---|---|
| Part Status | Active |
| FET Type | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1403pF @ 800V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 10A |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK (7-Lead) |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Manufacturer: GeneSiC Semiconductor
Description: SIC CO-PACK SJT/RECT 10A 1.2KV
In Stock: 0
Manufacturer: GeneSiC Semiconductor
Description: TRANS SJT 1200V 25A TO263-7
In Stock: 372
