genesic is a pioneer and a world leader in silicon carbide technology, while also invested in high power silicon technologies. the global leading manufacturers of industrial and defense systems depend on genesic's technology to elevate the performance and efficiency of their products.
| Numero de parte | GA10SICP12-263 |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | - |
| Tecnología | SiC (Silicon Carbide Junction Transistor) |
| Drene a la fuente de voltaje (Vdss) | 1200V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 25A (Tc) |
| Voltaje de conducción (Rds máx. Encendidos, Rds mínimos activados) | - |
| Vgs (th) (Max) @ Id | - |
| Carga de puerta (Qg) (Max) @ Vgs | - |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 1403pF @ 800V |
| Vgs (Max) | - |
| Característica FET | - |
| Disipación de potencia (Máx) | 170W (Tc) |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 10A |
| Temperatura de funcionamiento | 175°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete de dispositivo del proveedor | D2PAK (7-Lead) |
| Paquete / caja | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Fabricante: GeneSiC Semiconductor
Descripción: SIC CO-PACK SJT/RECT 10A 1.2KV
En stock: 0
Fabricante: GeneSiC Semiconductor
Descripción: TRANS SJT 1200V 25A TO263-7
En stock: 372
