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| Numéro d'article | GA10SICP12-263 |
|---|---|
| État de la pièce | Active |
| FET Type | - |
| La technologie | SiC (Silicon Carbide Junction Transistor) |
| Drain à la tension de source (Vdss) | 1200V |
| Courant - Drain continu (Id) @ 25 ° C | 25A (Tc) |
| Tension du variateur (Max Rds On, Min Rds On) | - |
| Vgs (th) (Max) @ Id | - |
| Charge de porte (Qg) (Max) @ Vgs | - |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 1403pF @ 800V |
| Vgs (Max) | - |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 170W (Tc) |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 10A |
| Température de fonctionnement | 175°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | D2PAK (7-Lead) |
| Paquet / cas | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Fabricant: GeneSiC Semiconductor
La description: SIC CO-PACK SJT/RECT 10A 1.2KV
En stock: 0
Fabricant: GeneSiC Semiconductor
La description: TRANS SJT 1200V 25A TO263-7
En stock: 372
